PART |
Description |
Maker |
DFE201208S-1R5M |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
|
Murata Manufacturing Co...
|
DFE201208S-2R2M |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
|
Murata Manufacturing Co...
|
DFE201208S-1R5M-18 |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
|
Murata Manufacturing Co...
|
DFE201210S-1R0M-18 |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
|
Murata Manufacturing Co...
|
1239AS-H-1R0M-18 |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
|
Murata Manufacturing Co...
|
JAN1N5300U JANS1N5314UR-1 1N5283UR-1 1N5284UR-1 1N |
Current Limiter Diode Single Inverter Gate 5-SOT-23 -40 to 85 1.5 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB CURRENT REGULATOR DIODES 0.43 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB 4-Pin DIP Phototransistor Output Optocoupler 1.4 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB CURRENT REGULATOR DIODES 3.6 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB CURRENT REGULATOR DIODES 0.27 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB CURRENT REGULATOR DIODES 4.3 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB CURRENT REGULATOR DIODES 0.33 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB CURRENT REGULATOR DIODES 1.4 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB CURRENT REGULATOR DIODES 0.91 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB CURRENT REGULATOR DIODES 0.39 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB CURRENT REGULATOR DIODES 0.3 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB Pulse-Width-Modulation (Pwm) Control Circuit 16-SOIC 0 to 70 CURRENT REGULATOR DIODES
|
MICROSEMI[Microsemi Corporation] Microsemi, Corp. MICROSEMI CORP-LAWRENCE
|
LA305-S |
Current Transducer LA 305-S Sensor, Closed Loop Current Transducer, Primary Nominal r.m.s Current IPN 300A
|
http:// LEM[LEM] LEM Components
|
FS1UM-16A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex Power Semiconductors Mitsubishi Electric Corporation
|
Z86L7908PSC |
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:10A; Holding Current:50mA 8位微控制
|
INTEGRAL JOINT STOCK COMPANY
|
STK1040 |
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-202; Current, It av:10A; Holding Current:50mA
|
|
TA20141803DH |
SCR Thyristor; Gate Trigger Current Max, Igt:200mA; Current, It av:1800A; Package/Case:TA2; Repetitive Reverse Voltage Max, Vrrm:1400V; Current Rating:2820A RoHS Compliant: Yes
|
POWEREX INC
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